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Research at OU

Engineering

 
1 Hasegawa, Y.*1 ; Tongchant, S.*1 ; Wada, Y.*1 ; Tanaka, H.*2 ;
Kawai, T.*2 ; Sakata, T.*3 ; Mori, H.*3 ; Yanagida, S.*1
*1(Graduate School of Engineering) *2(Institute of Scientific and Industrial Research) *3(Research Center for Ultra-High Voltage Electron Microscopy)
Enhanced Luminescence and Photomagnetic Properties of Surface-Modified EuO Nanocrystals
Angewandte Chemie International Edition, 41, 2073-2075(2002)


2 Hashimoto, M. ; Zhou, Y-k. ; Kanamura, M. ; Asahi, H. (Institute of Scientific and Industrial Research)
High Temperature (> 400K) Ferromagnetism in III-V-Based Diluted Magnetic Semiconductor GaCrN Grown by ECR Molecular-Beam Epitaxy
Solid State Communications, 122, 37-39 (2002)

"Semiconductor-spin-electronic" where electron charges as well as spins are controlled is one of the important key technologies in the next generation industries. However, for the practical use, the development of the room-temperature ferromagnetic semiconductors is definitely required. We have successfully synthesized new III-V-based magnetic semiconductor GaCrN for the first time. The Curie temperature is higher than 130 °C. They can be used to fabricate room-temperature operating spin-controlled devices in addition to optical and electronic devices because of III-V-based semiconductors.


3 Hatanaka, K. ; Tsuboi, Y. ; Fukumura, H. ; Masuhara, H. (Graduate School of Engineering)
Nanosecond and Femtosecond Laser Photochemistry and Ablation Dynamics of Neat Liquid Benzenes
The Journal of Physical Chemistry B, 106, 3049-3060 (2002)


4 Hirose, K. ; Ono, T. (Graduate School of Engineering)
Direct Minimization to Generate Electronic States with Proper Occupation Numbers
Physical Review B, 64, 085105 (2001)

We implement the direct minimization of the energy functional proposed by Galli et al. to derive the correct self-consistent ground-state solution of the Kohn-Sham equation. Since this method completely avoids the instability caused by the level crossing, one can determine the electronic structure of metallic systems to a high degree of accuracy. The efficiency of the method is illustrated by calculating the ground-state energy of C2 and Si2 molecules and the W(110) surface to which a tungsten adatom is adsorbed.


5 Hirotsu, Y. ; Ishimaru, M. ; Ohkubo, T. ; Hanada, T. ; Sugiyama, M. (Institute of Scientific and Industrial Research)
Application of Nano-diffraction to Local Atomic Distribution Function Analysis of Amorphous Materials
Journal of Electron Microscopy, 50, 435-442(2001)

A method is proposed for the local atomic distribution function analysis of amorphous materials. This method is based on local halo-electron diffraction intensity analysis with nano-sized electron probes as small as 25 ~ 3 nm, taking advantage of the intensity recording with imaging plate. Using a thin silicon nitride film the local structure analysis method was demonstrated. This method was applied to the analysis of local amorphous structures of SiO2 layers formed by an oxygen-ion implantation into single crystal SiC.


6 Hyun, S. K. ; Nakajima, H. (Institute of Scientific and Industrial Research)
Fabrication of Porous Iron by Unidirectional Solidification in Nitrogen Atmosphere
Materials Transactions, 43, 526-531 (2002)


7

Imanaka, N. ; Itaya, M. ; Adachi, G. (Graduate School of Engineering)
First Identification of Tetravalent Hf4+ Ion Conducting Solid
Materials Letters, 53, 1-5 (2002)

A new tetravalent cation conducting solid electrolyte whose Hf4+ ion conductivity is the highest among the tetravalent ion conducting solids and shows an extraordinary high and comparable conductivity to the commercially available divalent oxide anion conductor series, was artificially designed by strictly selecting the structure and the constituent elements. Since the present solid electrolyte shows reasonably high ion conducting characteristics, promising applications such as rechargeable batteries and chemical sensors for an environmental gas monitoring, are greatly expected.



8 Kakeshita, T. ; Ullakko, K. (Graduate School of Engineering)
Giant Magnetostriction in Ferromagnetic Shape-Memory Alloys.
MRS Bulletin, 27, 105-109(2002)

Since the discovery of giant magnetic field-induced strain caused by conversion of variants in a ferromagnetic shape memory Ni2MnGa alloy, the research in this field has attracted considerable attention to applications for using the materials as actuators and sensors. In this paper, we show giant magnetostrictive behavior in three ferromagnetic shape memory alloys - Ni2MnGa , Fe-Pd and Fe3Pt - and discussed the mechanism of conversion of variants by magnetic field.


9 Kamada, Y.; Hitomi, Y. ; Kingetsu, T. ; Yamamoto, M. (Graduate School of Engineering)
In Situ Observation of Epitaxial Growth of [Au/Co/Cu] and [Cu/Co/Au] Superlattices and Their Magnetic Interface Anisotropies
Journal of Applied Physics, 90, 5104-5110 (2001)

Ternary magnetic strained superlattices with reverse deposition sequence, [Au/Co/Cu] and [Cu/Co/Au] superlattices were fabricated on an atomistic scale. The epitaxial crystal growth during deposition was observed by RHEED on a real time basis. The artistic, artful fabrication method to contain strain in the ferromagnetic layers is successfully introduced. The perpendicular magnetic anisotropy, which is important as the magnetic recording media in the next generation, appears in the [Cu/Co/Au] superlattice but not in the [Au/Co/Cu]. The relationship between the perpendicular magnetic anisotropy and the interface structure is clarified.


10  Kamiya, T. ; Kusumoto, S. ; Inoue, K. (Graduate School of Information Science and Technology)
CCFinder: A Multilinguistic Token-Based Code Clone Detection System for Large Scale Source Code
IEEE Transactions on Software Engineering, 28, 654-670 (2002)
 
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